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Leading material technology, creating a core energy-saving life ————Cohenius debut at SEMICON CHINA 2021
SEMICON CHINA 2021, with the theme of " Globally Cross-border, Heart and Chip connected ", was grandly opened at Shanghai New International Expo Center on March 17, 2021. As a third-generation semiconductor material and power device supplier, Qingdao Cohenius Microelectronics Co., Ltd. ("Cohenius") and its wholly-owned subsidiary Genettice (Qingdao) semiconductor materials Co., Ltd ("Genettice ") bringing a variety of high-performance GaN materials, device products and application solutions to the exhibition at Booth 2207 in Hall N2.
By the opportunity of this exhibition, Cohenius and Genettice exhibited 650 V series GaN epitaxial wafer materials, GaN power devices and corresponding GaN fast charging application solutions.
The silicon-based GaN epitaxial wafer exhibited was successfully developed by Genettice on this time. It has the advantages of high pressure resistance, high temperature resistance, low leakage, and low on-resistance. According to the standard TDDB test method, its long-term effective life under the nominal withstand voltage value reaches 109 (10 to the ninth power) hours, which is at the leading level in the international industry.
The 650VGaN power device developed by Cohenius adopts enhanced device technology and has the characteristics of low parasitic effects, high switching speed, and high efficiency. The on-resistance of this series of products covers 55-300mΩ, stable output current 9-24A, RdsonxQg is 350mΩ/nC, which can meet the requirements of 0-10kW consumer fast charging, wireless charging, smart home appliances, 5G communication, cloud computing and other demand of application scenarios. In terms of encapsulation, the product adopts advanced PQFN package, which takes into account the needs of convenience, ease of use, compactness, low parasitic and good heat dissipation.
On this basis, Cohenius has also developed a 65-120W series PD fast charging application program to demonstrate the technical advantages of its own GaN power devices in the next generation of fast charging applications. Benefiting from the performance advantages of low leakage, high efficiency, and high switching speed of Cohenius's GaN power devices, Cohenius GaNPD fast charge has reached the level of output efficiency greater than 94% and power density greater than 30W/inch³. It has effectively solved the problem of large heat and non-portable size for the high-power fast charge, and has become an excellent power solution for various portable electronic products.
Facing the new generation of power and microwave system applications, Genettice is committed to providing the industry with standardized GaN epitaxial wafer products and customized services. Cohenius is committed to providing high-performance, cost-effective pure domestic GaN devices and application technology solutions for the current demanding GaN fast charging field, and providing core component support for 5G communications, cloud computing, new consumer power supplies, intelligent driving, etc.