Innovative Energy-gathering Power Crystal Source-Energy-gathering Crystal Source 8-inch GaN Epitaxial Material Project Launch and Product Release Ceremony Successfully Held

On September 10, 2019, the "8-inch GaN Epitaxial Material Project Launch and Product Release Ceremony" of Ju Energy Crystal Source (Qingdao) Semiconductor Materials Co., Ltd. was held in Jimo District, Qingdao City. Mr. Wei Jun, Executive Vice President of National Integrated Circuit Industry Investment Fund Co., Ltd., Mr. Lu Tao, District Mayor of Jimo District, Qingdao City, Ms. Li Li, Deputy District Mayor, Mr. Xing Luzheng, Chairman of Qingdao Urban Investment Group, Liu Xinyu, Managing Partner of Shengshi Investment, Mr. Zhao Ye, Deputy General Manager of Huaxin Investment II, Investment Management Agency of National Integrated Circuit Industry Investment Fund Co., Ltd., Mr. Geng Bo, Deputy Secretary-General of the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance, mr. Yan Yanlun, Managing Director of CR Capital-Runke Investment, Mr. Lin Jianxing and Mr. Yan Ruicheng, Managers of Taiwan Xintang Technology Co., Ltd., Associate Professor Wang Maojun of Institute of Micro-Nano Electronics of Peking University, mr. Yang Yunchun, Chairman of Beijing Naiwei Technology Co., Ltd., Mr. Cong Peiguo, Independent Director, Ms. Zhang Nan, Chairman of the Board of Supervisors, Mr. Zhang Yunpeng, General Manager, Mr. Zhang Abin, Deputy General Manager, Mr. Cai Meng, Chief Financial Officer and other relevant government agencies, partners, leaders and representatives of banks, securities firms, media and enterprises attended the ceremony. At the beginning of the ceremony, Mr. Yang Yunchun, Chairman of Naiwei Technology, delivered a speech. First of all, he expressed his warm welcome and gratitude to all the distinguished guests and friends for coming. He said that since its listing, Neville Technology has actively laid out its layout in the Internet of Things industry, focusing on the development of MEMS and GaN businesses. In the field of GaN, Neville Technology has invested in Jimo to set up a concentrated energy crystal source company to focus on the research and development and growth of GaN epitaxial materials. In Laoshan, we invested in the establishment of a core company, focusing on the development and design of GaN devices. From the entry to the completion and commissioning of the project, it only took more than a year for the energy gathering crystal source, which is inseparable from the strong support and patient guidance of the governments at all levels in Qingdao and Jimo District.

Today, the 8-inch GaN epitaxial material project of energy gathering crystal source was officially put into production. Neville Technology hopes to take this opportunity to actively grasp the domestic substitution opportunity of the third generation semiconductor industry, continue to build the third generation semiconductor material production base and device design center in Qingdao, and continue to contribute to the development of China's integrated circuit industry.

In his speech, Mr. Xing Luzheng, Chairman of Qingdao City Investment Group, affirmed the cooperation with Naiwei Technology, Minhe Capital and Jimo District. He believed that as a fast-growing emerging semiconductor enterprise, Jengengyuan, together with the design company Jengeng Chuangxin, will help Qingdao occupy the commanding heights of the third generation semiconductor industry and form a new generation of information technology industry with semiconductors as the basic layer. The project was put into production and product release, it is an important step in the development of energy-gathering crystal sources, and we hope to achieve better development in the future. Ms. Liu Xinyu, managing partner of

Shengshi Investment, said in her speech that the third generation semiconductor materials have unique properties and are of great strategic significance in the domestic substitution process of the semiconductor industry. As a shareholder and strategic partner, I am very glad to see that the 8-inch GaN epitaxial material project of energy gathering crystal source invested by Neville Technology in Jimo, Qingdao can be quickly completed and put into production, it is hoped that the project will contribute to industrial development and regional economic development in the future.

Mr. Lu Tao, the mayor of Jimo District, Qingdao, expressed his congratulations to Neville Technology and Energy-gathering Crystal Source in his speech. Leaders and representatives from the National Integrated Circuit Industry Fund, Neville Technology, Huaxin Investment, Shengshi Investment, Industrial Alliance, universities, financial institutions and media are welcome to visit Jimo. The district government and various functional departments will continue to provide quality services to enterprises in the district, welcome more enterprises to invest here and share development opportunities.

Mr. Lu Tao, Mr. Wei Jun, Mr. Xing Luzheng, Ms. Liu Xinyu, Mr. Wang Haoxian, Mr. Geng Bo, Mr. Zhao Ye, Mr. Yan Yanlun, Mr. Yang Yunchun and Mr. Yuan Li jointly opened the ceremony and officially announced the production of "8-inch GaN epitaxial material" from the energy gathering crystal source and the release of new products. Dr. Yuan Li, general manager of

energy gathering crystal source, officially released a series of 6-8 inch GaN epitaxial wafer products and introduced the projects and products. The related products released by

energy gathering crystal source this time include 8-inch silicon-based gallium nitride epitaxial wafers and 6-inch silicon carbide-based epitaxial wafers, which can meet the requirements of the next generation of power and microwave electronic devices for large-size, high-quality, high-consistency and high-reliability gallium nitride epitaxial materials, and provide material guarantee for core components in 5G communication, cloud computing, new consumer electronics, intelligent white electricity, new energy vehicles and other fields.

Gathering Crystal Source Project has mastered the world's leading 8-inch silicon-based gallium nitride epitaxy and 6-inch silicon carbide-based epitaxial growth technologies. For power device applications, the product range includes 8-inch AlGaN/GaN-on-Si epitaxial wafers and 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. At the same time, the energy-gathering crystal source has innovatively applied its own advanced 8-inch GaN epitaxial technology in the microwave field, and developed an 8-inch AlGaN/GaN-on-HR Si epitaxial wafer with high performance, large size, low cost and compatibility with standard 8-inch device processing technology. In addition to silicon-based gallium nitride, the poly-energy source also has an AlGaN/GaN-on-SiC epitaxial wafer product line to meet customer demand for silicon carbide-based gallium nitride epitaxial materials.

takes the HVA650/HVA700 8-inch AlGaN/GaN-on-Si epitaxial wafer product shown by the energy-gathering crystal source as an example. This type of GaN epitaxial wafer has the material characteristics of high crystal quality, low surface roughness and high consistency. At the same time, it has the electrical characteristics of low on-resistance, high withstand voltage, low leakage and high temperature resistance. It is worth mentioning that the poly-energy source GaN epitaxial wafer has excellent material reliability. According to the standard TDDB test method, its long-term effective life under the nominal pressure value reaches 109 hours, which is in the leading level in the international industry. Using GaN epitaxial wafers with concentrated energy crystal sources, customers can achieve high performance, high consistency, high yield, high reliability and other advantages when developing GaN devices, helping customers to seize the competitive opportunities in the field of third-generation semiconductor devices.

Energy Gathering Crystal Source (Qingdao) Semiconductor Material Co., Ltd. was established in June 2018. It is a third generation semiconductor material research and development and manufacturing enterprise jointly invested by Beijing Naiwei Technology Co., Ltd., Qingdao Haisi Minhe Semiconductor Investment Center, Qingdao Minxin Investment Center and Dr. Yuan Li's technical team. The first phase of the project has an annual production capacity of 10000 6-8 inch GaN epitaxial wafers. During the construction of the energy gathering crystal source project, the project received the meticulous care and strong support of the National Integrated Circuit Industry Investment Fund, the governments of Qingdao and Jimo District, and Qingdao Urban Construction Investment Group. The energy gathering crystal source project was also rated as a key project in Qingdao. It is believed that with the concern and support of all parties, the poly-energy crystal source is expected to become the world's leading professional manufacturer of GaN epitaxial materials.