Energy-gathering Crystal Source Won the 2020 Third Generation Semiconductor Materials Famous Brand Award

December 8-10, 2020, Touchchina & Semiexpo Shenzhen2020 was successfully held in Shenzhen International Convention and Exhibition Center. This event is organized by China Communications Industry Association, Shenzhen Semiconductor Industry Association, Guangzhou Semiconductor Association, Jiangsu Semiconductor Industry Association, Zhejiang Semiconductor Industry Association, Chengdu Integrated Circuit Industry Association, Shenzhen Semiconductor Display Industry Association, Shenzhen Zhongxin Co-sponsored by Exhibition Co., Ltd. (affiliated to the global B2B media group Tarsus). During the

conference, energy gathering crystal source (Qingdao) semiconductor materials co., ltd. (hereinafter referred to as "energy gathering crystal source") and its brother company Qingdao energy chuangxin microelectronics co., ltd. (hereinafter referred to as "energy gathering chuangxin"), as the third generation semiconductor materials and power device suppliers, exhibited 650 V series GaN epitaxial wafer materials, GaN power devices and corresponding GaN fast charging application schemes, it provides high-performance, cost-effective pure domestic GaN materials, devices and application technology solutions for the current demand for GaN fast charging field. In addition to fast charging, the company can also meet the needs of 0-10 kW consumer fast charging, wireless charging, smart home appliances, 5G communications, cloud computing and other application scenarios. Energy gathering crystal source and energy gathering core adhering to the working principle of rapid response to customer needs, and constantly meet the technical requirements of customers, in the industry has a good reputation and corporate image. On the evening of December 8,

, in the "2020 New Display and Semiconductor and 5G Industry Most Influential Annual Selection", the energy gathering crystal source won the "2020 Third Generation Semiconductor Material Famous Brand Award" issued by China Communications Industry Association. The award affirmed the company's efforts and achievements in the research and development and innovation of the third generation semiconductor materials, and represented the high recognition of the energy gathering crystal source by the industry.

Energy-gathering Crystal Source was established in June 2018. The company is located in Jimo District, Qingdao City. It is mainly engaged in the research and development, design, manufacturing and sales of third-generation semiconductor GaN epitaxial materials, and is committed to providing customers with Large-size, high-performance GaN epitaxial solutions and material products.

Company has mastered the industry-leading 8-inch GaN-on-Si and 6-inch GaN-on-SiC epitaxy technologies and provides customers with high-performance GaN epitaxial wafer products that meet industry standards. Its product lines include AlGaN/GaN-on-Si, P-cap AlGaN/GaN-on-Si, GaN-on-HR Si, GaN-on-SiC, covering GaN power and microwave device applications.

energy gathering crystal source is committed to providing standardized GaN epitaxial wafer products and customized services for the industry. The company's customers include well-known semiconductor device manufacturers, equipment manufacturers, university research institutes, etc. at home and abroad, and related products and services have won unanimous praise from customers. In the future, poly energy crystal source will continue to work in the industry, as always, to provide customers with innovative products and quality services.