Gathering Energy Innovation Appears at 2020 (Winter) USB PD & Type-C Asia Exhibition

Recently, the 2020 (Winter) USB PD & Type-C Asia Exhibition hosted by the charging head network was successfully held in Shenzhen. As the third generation semiconductor power device supplier, Qingdao Juaneng Chuangxin Microelectronics Co., Ltd. (hereinafter referred to as "Juaneng Chuangxin") and its brother company Juaneng Crystal Source (Qingdao) Semiconductor Material Co., Ltd. (hereinafter referred to as "Juaneng Crystal Source") participated in the exhibition, exhibiting 650V series GaN epitaxial wafer materials, GaN power devices and corresponding GaN fast charging application schemes, attracting the attention of many exhibition audiences.

At the "2020 (Winter) USB PD & Type-C Asia Conference" held at the same time, Yuan Li, General Manager of Gaoneng Chuangxin, delivered a speech on the topic of "Domestic GaN Materials and Device Technology Solutions for Fast Charging Applications". In the speech, 650V series GaN epitaxial wafer materials, GaN power devices and corresponding GaN fast charging application schemes were introduced.

Among them, the 650V GaN power device of the multi-energy core adopts enhanced device technology, which has the characteristics of low parasitic effect, high switching speed and high efficiency. The on-resistance of this series of products covers 55-300mΩ, stable output current 9-24A, and RdsonxQg is 350mΩ/nC, which can meet the needs of 0-10kW consumer fast charging, wireless charging, smart home appliances, 5G communication, cloud computing and other application scenarios.

Based on the above 650V series gallium nitride power device products, Juaneng Chuangxin has developed a 65-120W series PD fast charging application scheme to demonstrate the technical advantages of its own gallium nitride power devices in the next generation of fast charging applications. Thanks to the performance advantages of low leakage, high efficiency and high switching speed of the poly-energy core gallium nitride power device, the poly-energy core gallium nitride PD fast charging has reached an output efficiency of more than 94% and a power density of more than 30W/inch, effectively solving the current pain points of high-power fast charging with large heat generation and unportable size, and has become an excellent power supply solution for various portable electronic products.

Poly Energy Chuangxin was established in July 2018, mainly engaged in the design and development of the third generation semiconductor gallium nitride power and microwave devices. For the new generation of power and microwave system applications, JSC is committed to providing high-performance, cost-effective pure domestic GaN devices and application technology solutions for the current high demand for GaN fast charging, and providing core component support for 5G communications, cloud computing, new consumer power supplies, intelligent driving, etc.