Energy-gathering crystal source successfully developed "8-inch silicon-based gallium nitride epitaxial wafer"

Recently, Naiwei Technology Holding Subsidiary Company (Qingdao) Semiconductor Material Co., Ltd. (hereinafter referred to as "Gathering Crystal Source") successfully developed "8-inch Silicon-based Gallium Nitride (GaN-on-Si) Epitaxial Wafer". Since its establishment,

has actively invested in research and development, giving full play to the technical advantages of the core team, successively overcoming technical difficulties such as lattice mismatch between GaN and Si materials, large-size epitaxial stress control, high-voltage GaN epitaxial growth, etc., and successfully developing 8-inch silicon-based gallium nitride (GaN-on-Si) epitaxial wafers that have reached the leading level in the global industry. This type of epitaxial wafer achieves 650V/700V high withstand voltage capability while maintaining the high crystal quality, high uniformity and high reliability of the epitaxial material, and can fully meet the application requirements of high-voltage power electronic devices in the industry. The 8-inch silicon-based gallium nitride (GaN-on-Si) epitaxial growth chamber and the physical diagram of the epitaxial wafer are as follows:

The successful development of this "8-inch silicon-based gallium nitride (GaN-on-Si) epitaxial wafer" makes the energy-based crystal source become the leading manufacturer in the world that can provide 8-inch GaN wafer epitaxy with long-term reliability, in addition, under the condition of adopting the international industry's strict criteria and standards, the epitaxial wafer developed by the concentrated energy crystal source has performance advantages in materials, mechanics, electricity, withstand voltage, high temperature resistance, life and other aspects, which can ensure the safe and reliable application of relevant materials and technologies in 5G communication, cloud computing, fast charging power supply, wireless charging and other fields.

Compared with the second-generation semiconductor silicon (Si), gallium arsenide (GaAs) and other materials, the third-generation semiconductor material gallium nitride (GaN) has a larger band gap (> 3 eV), generally also known as wide band gap semiconductor materials. Thanks to the advantage of the band gap, GaN materials are significantly better than Si, GaAs and other traditional semiconductor materials in terms of breakdown electric field, intrinsic carrier concentration and anti-radiation ability. In addition, GaN materials are also superior to Si in terms of carrier mobility and saturated carrier concentration, so they are particularly suitable for the production of power and microwave electronic devices with high power density, high speed and high efficiency, and have broad application prospects in 5G communications, cloud computing, fast charging, wireless charging and other fields.

At the same time, epitaxial growth of GaN on a silicon substrate can effectively combine the high performance of GaN materials with the large size and low cost advantages of mature Si wafers. Based on advanced GaN-on-Si technology, high-performance GaN devices can be achieved while controlling device manufacturing costs to a level comparable to traditional Si-based devices. Therefore, GaN-on-Si technology is also considered to be the mainstream technology of new power and microwave electronic devices.